Abstract
We have fabricated SiGe quantum dots (QDs) by means of a two-step Si ion implantation followed by thermal rapid thermal annealing (RTA) method. SiGe QDs with the 4–6 nm diameter are formed uniformly in the near-surface region of Ge substrate. The RTA processes are performed at 800 and 900 °C for 15 s, respectively. Both experimental and theoretical analysis indicates that the higher temperature (900 °C) RTA can enhance the growth of SiGe QDs. Two photoluminescence peaks are observed near 572 and 581 nm at room temperature. The mechanism of the luminescence from SiGe QDs is discussed.
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