Self‐assembled quantum dot formation induced by surface energy change of a strained two‐dimensional layer

Abstract

AbstractTo account for the occurrence (or not) of the Stranski‐Krastanow (SK) transition (two‐dimensional to 3D change of surface morphology) during the epitaxial growth of various lattice‐mismatched semiconductor systems, we present a simple equilibrium model taking into account not only the lattice mismatch, but also the dislocation formation energy and the surface energy. It demonstrates the importance of these parameters especially for II–VI systems such as CdTe/ZnTe and CdSe/ZnSe. For II–VIs indeed, as misfit dislocations are easier to form than in III–Vs (such as InAs/GaAs) or IV systems (Ge/Si), the 3D elastic transition is short‐circuited by the plastic one. Nevertheless, by lowering surface energy, telluride and selenide quantum dots can also be grown as predicted by our model and as evidenced experimentally by reflection high‐energy electron diffraction (RHEED), atomic force microscopy and optical measurements. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)