Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory

Abstract

Abstract Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on-demand entangled photon sources through biexciton–exciton (XX-X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski–Krastanow grown In(Ga)As/GaAs QDs with an ultra-thin Al x Ga1−x As layer. After carefully investigating the mechanisms governing the vanishing of wetting-layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two-photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare-earth-ion-doped crystals for solid quantum memory.