Abstract
Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown on GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of InxGa1-xAs on the structural and optical properties of QDMs are investigated by using atomic force microscopy and photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.
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