Abstract
Microcages and nanowires of InN were synthesized by ammonification of an indium precursor in the temperature range 650―700 °C. The phases of the ammonified products were identified through X-ray diffraction (XRD). Morphology and crystal structure of the samples were determined through field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and high resolution transmission electron microscopy (HRTEM) analysis. The thermal behavior of the precursor and synthesized InN powder was investigated using thermogravimetric analysis (TGA). The growth mechanism for the formation of different morphologies at various experimental conditions is explained on the basis of diffusion and vapor-solid process following least action principle. Large blue shift (1―1.5 eV) in the apparent band gap was observed with the increase of reaction time. The contributions of refractive index and the existence of three simultaneous direct transitions at 0.8, 1, 1.4 eV were identified from the optical absorption spectra. Electrical measurements were carried out to obtain a band gap of 1.25 eV in the sample.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
