Self-assembled AlxGa1−xN nanorods grown on Si(001) substrates by using plasma-assisted molecular beamepitaxy

Abstract

Hexagonal AlxGa1−xN nanorods were grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(001) substrates.The Al mole fraction was determined from x-ray diffraction (XRD) measurement and its valuewas varied from 0 to 15. It is found that, under group III-rich conditions, the growth rate of theAlxGa1−xN nanorods decreases and the diameter increases due to the possibility of incorporation ofaluminium and gallium. In order to study structural and optical properties, x-raydiffraction and cathodoluminescence (CL) measurements were carried out. The Al content(x) is calculated from these measurements and their values are compared.