Self-aligned top-gate amorphous oxide thin-film transistors with IZO/IGZO stacked active layer and Al reacted source/drain region

Abstract

In this work, self-aligned top-gate amorphous oxide semiconductor thin-film transistors with InZnO/InGaZnO (IZO/IGZO) stacked active layer and aluminum (Al) reacted source/drain region are investigated. The experimental results show the IZO layer helps with increasing mobility which is up to 22.4 cm2/V·s, and the IGZO layer modulates threshold voltage. The Al reacted source-drain region leads to a self-aligned device structure and ensures a low source/drain resistance which is low to $30.6 \Omega \cdot$ cm.