Abstract
AbstractThis work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si nanocrystals deposited on ultra-thin tunnel oxide with LPCVD. As compared with a Si nanocrystal memory device, a TiSi2/Si hetero-nanocrystal memory device exhibits faster programming and erasing, and longer retention time.
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