Abstract
The increases in the packing density and the resulting shrinkage of the silicon integrated circuit dimensions led to the investigation and successful application of the deposited refractory silicide layers as the gate and interconnection metallization. The continued shrinking of the device dimensions has now turned attention to further lowering of the resistance at the gate level and to finding a contact metallization for the shallow junctions. Although refractory metals are being considered for the former, self-aligned silicides of cobalt, titanium, platinum, and nickel offer the possibility of satisfying both the gate and interconnection and contact metallization requirements. This paper will review the present status of the refractory silicide and refractory metal technologies and compare them with the upcoming self-aligned silicide technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.