Abstract
Self-aligned metal/IDP (SMI) technology is proposed to achieve high-speed bipolar transistors. SMI technology produces stacked metal/in-situ doped poly-Si (IDP) base electrodes that have a small thermal budget to obtain low base resistance and a shallow link base for small-collector capacitance and high-cutoff frequency. A 16.2-ps delay time in an ECL ring oscillator, and a delay time of 14.3 ps in a differential ECL ring oscillator were achieved by using SMI technology with an ion-implanted base.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
