Abstract

In this paper we present a kind of losses on MOSFET as a synchronous rectifier which is very difficult to remove in compare with the other losses. For high performance, downsizing and lightweight of digital equipment as a personal computer, digital ICs are developed with high speed and densely integrated. The supply voltage for these ICs becomes lower and the supply current becomes higher. A buck converter is widely used as a DC/DC converter for this purpose. In the buck converter, a synchronous rectifier of MOSFET with ultra low on-resistance is widely used as a low-side switch for higher conversion efficiency instead of a Schottky barrier diode as a free wheel diode. When the high-side switch is turned on as the low-side switch is off, the drain-source voltage of the low-side switch rises rapidly and the gate-source voltage rises simultaneously through the drain-gate capacity. As a result, the gate-source voltage becomes up to the gate threshold voltage and the low-side switch becomes active state and the drain current flows. We named this phenomenon dasiaself turn-onpsila where the loss occurs in the low-side switch.(Murata et al., 2003) in this paper a precise analysis of the self turn-on phenomenon is presented and the experiments for verification are also presented.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.