Self-trapping and ordering of heavy holes in the wide band-gap semiconductor β−Ga2O3

Abstract

Scanning tunneling microscopy (STM) has been utilized for imaging and manipulation of self-trapped holes on the surface of the wide band-gap semiconductor $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$. A positively charged surface layer comprised of localized holes with ${10}^{13}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ density has been observed for $n$-doped samples. We show that the surface layer can be populated by hole pumping from the STM tip. A transition between the glassy phase and ordered striped phase of self-trapped holes has also been observed. Our analysis indicates that the saturated two-dimensional density of self-trapped holes may be determined by balance of self-trapping and Coulomb repulsion energies.