Abstract
The self-rectifying resistive switching (RS) characteristics of molybdenum oxide (MoOx) semiconductors are investigated in this paper. The MoOx RS layers are deposited by radio-frequency sputtering. By adjusting the O2 flow rate in the sputtering process to control the oxygen vacancy content in the MoOx layer, an Al/MoOx/Pt resistive random access memory (RRAM) with significant self-rectifying characteristics can be fabricated at room temperature (RT). The effect of the electrode size on the RRAM performance is examined. Both the high resistance state (HRS) and low resistance state (LRS) resistances decrease with increasing electrode size, which indicates that the Al/MoOx/Pt RRAM follows interface-controlled switching. The physical mechanisms of the self-rectifying, RS, and carrier conduction mechanisms are studied.
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