Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Abstract

The self-rectifying resistive-switching (RS) device is one of the most promising solutions to overcome the sneaking current issue in a 3D vertical crossbar array. In this letter, we report a CMOS-compatible, forming-free, self-rectifying resistive random access memory device with high uniformity and low operation voltage ( 109) characteristics. After introducing a 3-nm HfO2 thin film between Pd and WOx layer, Schottky contact of Pd/HfO2 was formed, which resulted in rectifying property. The HfO2 layer also served as an oxygen reservoir for RS in WOx layer. This novel memory device with excellent performance is a promising candidate for future high density embedded memory application.