Abstract
InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550 nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22 μm diameter device.
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