Abstract
In this study, we design and demonstrate a novel type of self-powered UV photodetectors (PDs) using single-crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self-powered UV PDs with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as-assembled PDs have a high on/off ratio of 19173 and a fast response speed (τr = 0.09 s, τf = 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures- and ZnS heterostructure-based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self-powered mode can reach as high as 19172, 2.56 A/W and 1.67 × 1010 cm Hz1/2 W−1, respectively. In addition, the photosensing performance of the self-powered UV PDs is studied in different ambient conditions (e.g., in air and vacuum). Moreover, a physical model based on band energy theory is proposed to explain the origin of the self-driven photoresponse characteristic in our device. The totality of the above study signifies that the present self-powered ZnS NTs-based UV nano-photodetector may have promising application in future self-powered optoelectronic devices and integrated systems.
Highlights
We have studied the photosensing performance of the self-powered UV PDs in different ambient conditions, showing that the photodetecting performance of the self-powered UV detector significantly degenerates in vacuum
This study suggests that the self-powered ZnS NTs-based UV PDs will provide a potential approach for the future self-powered optoelectronic devices and integrated systems
The ZnS nanotubes were grown on Si substrate via controlled thermal evaporation of ZnS powder (99.999%)
Summary
We have firstly designed and demonstrated a novel type of self-powered UV photodetectors using single-crystalline ZnS nanotubes as the photodetecting layer and Ag NWs transparent network as electrodes. The fabricated self-powered UV photodetectors with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristics at 0 V bias. These values are even higher than that of ZnS nanostructures-based PDs at a large bias voltage.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
