Abstract
We developed a self-powered broadband perovskite/silicon hybrid photodetector based on a novel heterostructure of Si/SnO2/MAPbI3/MoO3. The insertion of SnO2 and MoO3 was effective in reducing the recombination of photogenerated carriers. By optimizing the thickness of the SnO2 layer, the detection capabilities of the hybrid photodetectors were significantly improved. The best-performing photodetector had a 40 nm SnO2 layer, showing a detectivity of 2.23 × 1012 Jones with a responsivity of 50.9 mA W−1 at 815 nm and a photocurrent/dark current ratio of 3.37 × 104 under zero bias. Furthermore, the photodetectors were sensitive to broadband irradiation from 300 to 1150 nm.
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