Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters.

Abstract

A self-powered ultraviolet (UV) photodetector (PD) with a position-controlled array based on zinc oxide (ZnO) nanoclusters (NCs) has been proposed. The structure of the special array makes it possible to reduce the light loss and improve the light trap. The PD innovatively modifies the structure of ZnO PDs, which is distinguished from other traditional devices. The results demonstrate that the ZnO NC array can spontaneously generate the carrier and successfully achieve the detection at zero bias under the radiation of UV light. In this study, the structure is fabricated with two different substrates of silicon (Si) and GaN. At zero bias voltage, the Si-based PD under 365 nm shows the responsivity and external quantum efficiency (EQE) reaching up to 14.1 mA/W and 4.79%, respectively, and the responsivity of the GaN-based detector can be obtained up to 59.9 mA/W; its parameter of EQE is 20.04%, the photocurrent is 10-5A, and the on/off ratio is 174. Our findings indicate that this structure of the device has potential for applications that require detection of light.