Abstract
Self-powered photodetectors working in solar-blind region (below 280 nm) have attracted growing attention due to their wide applicability. Monoclinic Ga2O3 (β-Ga2O3) with excellent merits and a wide bandgap (4.9 eV) is regarded as a good candidate for solar-blind photodetector application. Self-powered photodetectors generally based on homo/heterojunction suffer from a complex fabrication process and slow photoresponse because of the interface defects and traps. Herein, we demonstrated a fabrication and characterization of a self-powered metal-semiconductor-metal (MSM) deep-ultraviolet (DUV) photodetector based on single crystal β-Ga2O3. The self-powered property was realized through a simple one-step deposition of an asymmetrical pair of Schottky interdigital contacts. The photocurrent and responsivity increase with the degenerating symmetrical contact. For the device with the most asymmetric interdigital contacts operated at 0 V bias, the maximum photocurrent reaches 2.7 nA. The responsivity Rλ, external quantum efficiency EQE, detectivity D*, and linear dynamic range LDR are 1.28 mA/W, 0.63, 1.77 × 1011 Jones, and 23.5 dB, respectively. The device exhibits excellent repeatability and stability at the same time. Besides, the device presents a fast response speed with a rise time of 0.03 s and a decay time of 0.08 s. All these results indicate a promising and simple method to fabricate a zero-powered DUV photodetector.
Highlights
Solar-blind photodetectors (PDs) working in the region which wavelength is less than 280 nm, can effectively detect the signal without the intense sunlight interference due to its extremely low natural background caused by the intensive absorption of ozone layer [1]
The photodetector was prepared on (−201) oriented single crystal β-Ga2O3 substrate equipped with an asymmetrical pair of Schottky interdigital contacts, gold was chosen as the contact material
In this study, we demonstrate the fabrication and characterization of self-powered MSM DUV photodetector based on single crystal β-Ga2O3
Summary
Solar-blind photodetectors (PDs) working in the region which wavelength is less than 280 nm, can effectively detect the signal without the intense sunlight interference due to its extremely low natural background caused by the intensive absorption of ozone layer [1]. Solar-blind photodetectors based on wide bandgap semiconductors such as AlGaN, ZnMgO, and ZnGaO have been reported [2,3,4,5]. Guo et al fabricated zero-power-consumption solar-blind PD based on β-Ga2O3/NSTO heterojunction and a fast photoresponse time (decay time is 0.07 s) was achieved [18]. These fabrication processes are complex and costly. A novel self-powered metal-semiconductor-metal (MSM) photodetector based on β-Ga2O3 single crystal was realized by an asymmetrical pair of Schottky interdigital contacts. We demonstrate a simple and effective method to fabricate the zero-powered solar-blind photodetector
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