Abstract

In this paper, local oxygen plasma treatment of SiC carbon surface epitaxial graphene (EG/SiC-C) samples was carried out by using an oxygen plasma processor. Some vacancy defects were introduced into the graphene, and the electronic structure of the graphene was regulated. After oxygen plasma treatment, the work function of EG/SiC-C increased, and the doping type gradually changed to P-type. Finally, a self-powered epitaxial graphene (EG)/SiC heterojunction UV photodetector with spot position response characteristics was prepared by reasonable device structure design.

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