Abstract

With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin). The lower energy consumption and multiple functions are the imperative requirements to spurred scientists and mechanists to make joint efforts to meet. To achieve lower energy consumption, a promising energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated into the field effect transistors (FETs) to play the important role for sensor. For bifunctional sensor, to harness the difficult for reflecting the magnitude of frequency, we resorted to synaptic transistors to achieve more intelligentization. Furthermore, with regards to the configuration of FET, we continued previous work: using the electrolyte gate dielectrics of FET—ion gel as the electrification layer to achieve high efficient, compact and extensively adoption for mechanosensation. The working principle of the GFET was based on the coupling effects of the FET and the TENG. This newly emerged self-powered sensor would offer a new platform for lower power consumption sensor for human–machine interface and intelligent robot.

Highlights

  • With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin)

  • The work principal of magnetic field sensor was that the magnetic field changed the distance between magnetic film and ion gel, giving rise to different signal. (Our previous work verified that the output of tribopotential-powered graphene field effect transistor (GFET) had certain functional relationship with the triboelectric distance)[21]

  • The magnetic film vertically suspends between the GFET and magnet. (The magnetic film adheres onto electrode which grounded)

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Summary

Introduction

With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin). To achieve lower energy consumption, a promising energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated into the field effect transistors (FETs) to play the important role for sensor. This newly emerged self-powered sensor would offer a new platform for lower power consumption sensor for human–machine interface and intelligent robot. To achieve high precision and high level of integration, the triboelectric potential originated form TENG can be incorporated into the field effect transistors (FETs) to tailor the transport properties of semiconductor channel for a myriad of versatile self-powered tribotronic ­devices[15,16,17]. Our previous work presented a noncontact mechanosensation active matrix based on tribotronic planar graphene transistors array to low-energy-cost real-time sensor and 2D ­imaging[21]. The work principal of magnetic field sensor was that (magnetic film and ion gel as friction layer) the magnetic field changed the distance between magnetic film and ion gel, giving rise to different signal. (Our previous work verified that the output of tribopotential-powered GFET had certain functional relationship with the triboelectric distance)[21]

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