Abstract
Self-powered photodetectors based on CdS:Ga nanoribbons (NR)/Au Schottky barrier diodes (SBDs) were fabricated. The as-fabricated SBDs exhibit an excellent rectification characteristic with a rectification ratio up to 106 within ±1 V in the dark and a distinctive photovoltaic (PV) behavior under light illumination. Photoconductive analysis reveals that the SBDs were highly sensitive to light illumination with very good stability, reproducibility and fast response speeds at zero bias voltage. The corresponding rise/fall times of 95/290 μs represent the best values obtained for CdS based nano-photodetectors. It is expected that such self-powered high performance SBD photodetectors will have great potential applications in optoelectronic devices in the future.
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