Abstract
A self-packaged piezoresistive pressure sensor was fabricated using a silicon-glass anodic bonding technique. The Wheatstone bridge piezoresistive sensing configuration was located on the lower surface of the silicon diaphragm and was vacuum sealed in a Si-glass cavity, and the embedded Al feedthrough lines at the Si-glass interface were used to realize the electrical connections between the piezoresistive sensing elements and hybrid metal electrode pads through Al vias and heavily doped diffusion zones. The pressure sensors demonstrate comparable performance characteristics, but a more simple process and low cost in comparison with the commercial Si-based piezoresistive pressure sensor. Due to the self-packaging protection, the pressure sensors are capable of handling harsh environments.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
