Abstract
A memory structure based on self-organized quantum dots (QDs) combining the advantages ofdynamic random access memory (DRAM) and flash memory which enables extremely fast write times(<1 ns) together with long storage times ( years) at room temperature is presented. A storage time of 1.6 s at 300 K in InAs/GaAs QDs with anadditional Al0.9Ga0.1As barrier—100 times longer than in a DRAM—is demonstrated. Much longer retention times of106 years are predicted for GaSb QDs in an AlAs matrix. A minimum write time of 6 ns iscurrently obtained for InAs/GaAs QDs, of the order of those for present DRAMs. An evenfaster write time below 1 ns, only limited by charge carrier capture and relaxation times (inthe order of picoseconds), is predicted for a slightly improved device structure.
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