Abstract
The crystal growth of single-crystalline Si1−xSnx layers with various Sn contents and analytical comparisons of their fundamental physical properties are strongly desired for next-generation group-IV electronics. In the present study, Si1−xSnx layers with varying Sn contents (1%−40%) were grown on various substrates [(001)-oriented Si, Ge, or InP] by solid-phase epitaxy. Crystallographic and composition analyses indicated that the grown Si1−xSnx layers were nearly lattice-matched to the substrates. When grown on Si, Ge, and InP substrates, the substitutional Sn contents were ∼1%, ∼20%, and ∼40%, respectively. Hard X-ray photoelectron spectroscopy revealed a valence-band offset resulting from the Sn substitution. The offset exhibited an upward-bowing tendency when plotted against the Sn content. The Si0.78Sn0.22/n-type Ge junction displayed rectifying diode characteristics with the ideality factor of 1.2.
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