Abstract
We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
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