Abstract
Microsized Ge wires can appear spontaneously when grown on a vicinal Si (111) surface miscut by 4 along the [11-2] direction by using molecular-beam epitaxy. Time-resolved in situ grazing incidence small-angle scattering of x rays, atomic force microscopy, and micro-Raman scattering show that the formation of Ge microwires is due to coalescence of islands along the step edges and ripening of the structures accompanied by a partial consumption of the wetting layer.
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