Abstract
Free-standing GaAs InAs heterostructure wires as thin as 20 nm and as long as 1 μm have been formed by vapor-liquid-solid (VLS) growth during organometallic vapor phase epitaxy. The grown wires were analyzed by transmission electron microscopy, which revealed that the crystal structure of the GaAs portion coincides with that of zincblende, and the InAs portion coincides with that of wurtzite. The atomic composition along the heterojunction was also measured by energy dispersive X-ray analysis. The composition changes within a width of 5 nm at the heterojunction interface. The InAs GaAs wires show a photoluminescence peak around 1.5 eV at 14 K, which indicates significant improvement in crystal quality over conventional GaAs InAs layer structures.
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