Self-organized Ge clustering on partially Ga-terminated Si(111) surfaces

Abstract

We demonstrated that spatially controlled self-organization in Ge clustering occurs on partially Ga-terminated Si(111) surfaces with both Ga-adsorbed 3×3 and Ga-desorbed 7×7 striped areas on them. Ge growth on Si(111) 3×3 surfaces proceeds in a modified layer-by-layer mode and in a Stranski–Krastanov mode on 7×7 surfaces. The difference in growth causes confinement of Ge clustering in the 7×7 striped areas. The 7×7 areas on the partially Ga-terminated surface do not play a role in determining Ge cluster size but in adjusting the alignment of Ge clusters.