Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure

Abstract

This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AIN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AIN system are calculated by solving a three-dimension effective mass Shrödinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.