Abstract

Nanometer sized Ag clusters were found to be uniformly formed in the initial stage of Ag growth on Sb-terminated Si(100) surfaces. Due to the saturation of Si dangling bonds by Sb adatoms, Ag clusters were grown on the Sb-terminated Si(100) surface without a Ag wetting layer. We found that the diameters and heights of Ag clusters were confined to a nanometer scale, and the size distribution was quite uniform compared to Ag growth on Sb-terminated Si(111). Those features are considered to result from the separation of Ag clusters by coherently aligned voids in the underlying Sb-terminated Si(100) surface. Tunneling spectroscopy measurements showed that the local conduction properties of Ag clusters gradually changed from semiconducting to metallic as Ag coverage increased.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call