Abstract
AbstractWe show a possibility to self‐organize InAs semiconductor quantum dots (SQDs) and As semimetal quantum dots (MQDs) in a close vicinity to each other in the GaAs matrix. For that we develop a combined process of the molecular beam epitaxy (MBE), in which self‐organization of the InAs SQDs was achieved in the Stranski‐Krastanow mode, whereas self‐organization of the As MQDs was realized by the low‐temperature MBE with the subsequent anneal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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