Abstract
In this work we have investigated Ni- or Au-induced crystallization and the lateral crystallization of planar amorphous germanium (α-Ge) on silicon dioxide at 360 °C without the deleterious effects of thermally induced self-nucleation. Subsequently, single crystalline Ge growth has been achieved on SiO2 by making dimension of α-Ge line to be smaller than the size of grains formed using Ni- and Au-induced lateral crystallizations at 360 °C. This method can be used to form the channel region of the MOS devices in upper layers of the three-dimensional integrated circuits at low temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
