Abstract

In this work we have investigated Ni- or Au-induced crystallization and the lateral crystallization of planar amorphous germanium (α-Ge) on silicon dioxide at 360 °C without the deleterious effects of thermally induced self-nucleation. Subsequently, single crystalline Ge growth has been achieved on SiO2 by making dimension of α-Ge line to be smaller than the size of grains formed using Ni- and Au-induced lateral crystallizations at 360 °C. This method can be used to form the channel region of the MOS devices in upper layers of the three-dimensional integrated circuits at low temperatures.

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