Abstract
Self-modulating incorporation of Sb atoms has been found in Si/SiGe superlattices grown by conventional solid source Si molecular beam epitaxy. The origin of this phenomenon has been attributed to the difference in the segregation length of Sb atoms in Si and SiGe layers. It has been found that the segregation length of Sb in Si 1− x Ge x layers increases as the Ge composition, x, increases and that Sb atoms are incorporated mainly in Si layers when Si/SiGe superlattices are grown.
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