Abstract
The self-limiting growth in the atomic layer epitaxy of ZnTe was investigated using the molecular beam epitaxy technique. The growth rate was kept constant at 0.5 monolayer per cycle, independent of Zn or Te beam intensities or substrate temperature in their selected ranges. These ranges are found to be narrower than those for the ALE of ZnSe. A mechanism for self-limiting at 0.5 monolayer is described based on vapor pressure of the materials, surface reconstruction and surface absorption of the atoms.
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