Abstract
During the lateral grain-growth process in lead zirconate titanate (PZT) thin films by selectively nucleated lateral crystallization using PZT seed, it was found that the lateral growth was saturated with the annealing temperature. The saturation of lateral growth was analyzed by the interface energy, which appeared during the crystallization process. The factors affecting the saturation of lateral growth were found to be the interface energy between the perovskite phase and the pyrochlore phase, and the one between the PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the growth-saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interface energy between the PZT thin film and the Pt bottom electrode. PZT grain size increased according to the Pt thickness, because the lattice parameter of Pt films increased with the thickness of the Pt films. The incubation time for nucleation in the PZT thin films increased with the amount of the ion damage on the Pt films.
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