Self-heating Parameter Extraction of Power Metal-oxide-silicon Field Effect Transistor Based on Transient Drain Current Measurement

Abstract

For the use of circuit simulation model for power Metal-Oxide-Silicon Field Effect Transistors (MOSFETs), the extraction of self-heating parameters based on transient I-V measurements has been developed. A set of transient drain current was measured through a pulsed I-V setup. The thermal resistance and thermal capacitance are extracted from the set of transient current data. The self-heating-free drain current, which is required for MOSFET model extraction, is obtained by extrapolating the transient data to t=0. Since the measurements after a certain delay are analyzed in this method, a very short pulse measurement which tends to suffer from ringing noises and requires a complicated DUT design is not required. The accuracy of the method is demonstrated for a power MOS model using the BSIMSOI parameter set.