Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

Abstract

In this paper, we study the self-heating mechanism and its impact on electrical performance of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal TCAD simulations. We propose an equivalent channel temperature to quantify the current degradation due to self-heating and also resolve the discrepancies between temperature measurements through electrical methods and thermal methods in the literature. We then explain the equivalent channel temperature’s behavior using the temperature- and field-dependent electron transport theory for short gate length HEMTs. The implications and guidelines to the various aspects of device design are also discussed.