Self-Healing Processes of Metallized Film Capacitors in Overload Modes—Part II: Theoretical and Computer Modeling

Abstract

In this article, we present the theoretical models on self-healing (SH) processes in metallized film capacitors (MFCs) in overload modes. Based on the proposed dynamic model of capacitor's SH resistance, the current and voltage of MFC in SH process and the value of dissipated energy, W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SH</sub> , can be calculated. Theoretical model of MFC degradation due to SH processes approves that in the vicinity of the breakdown places of polymer dielectric, a high SH energy leads to their carbonization. The numerous SH events result in the decreasing of the equivalent parallel resistance (EPR). An analysis of MFC electrothermal state shows that at critical values of applied voltage at 4-5 of nominal values, the dangerous local heating of the polymer dielectric can occur. Computer simulation describes the behavior of the EPR of the polymer film capacitor, which is determined by the number and intensity of SH acts. Finally, the numerical model for evaluation of the thermal state of the capacitor is offered. Numerous SH acts (especially of high SH energy level) cause the local heating of MFC section. The surface temperature of the capacitor may seem normal, though the local heating reaches the level dangerous for polymer. The analytic estimations and simulation results are in quite good agreement with experimental data.