Abstract
针对C/SiC低温氧化易失效的不足, 研究了CVI B-C基体改性2D C/SiC在700℃湿氧中100MPa下加载至60h的氧化行为, 利用SEM和TEM观察了改性材料不同服役时间的微结构特征, 揭示了演变规律. 研究表明, CVI B-C基体改性使C/SiC低温抗氧化能力显著提升. 基体裂纹及其在应力加载下的开裂均为氧化气体提供进入通道,而后可被B-C氧化产物B 2 O 3 封填, 抑制内部C消耗. CVI B-C与其氧化产物一同参与缺陷愈合. 在60h内, B-C改性层愈合能力尚未完全发挥, 可服役更长时间.
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