Abstract
We analyze the dynamics of dissipative solitons in silicon on insulator waveguides embedded in a gain medium. The optical propagation is modeled through a cubic Ginzburg-Landau equation for the field envelope coupled with an ordinary differential equation accounting for the generation of free carriers owing to two-photon absorption. Our numerical simulations clearly indicate that dissipative solitons accelerate due to the carrier-induced index change and experience a considerable blueshift, which is mainly hampered by the gain dispersion of the active material. Numerical results are fully explained by analytical predictions based on soliton perturbation theory.
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