Abstract
InAs quantum dots (QDs) were grown on SiO2/Si and SiOx/GaAs substrates by molecular beam deposition. InAs QDs were formed on SiOx films through a Volmer–Weber mode. The structural information obtained by atomic force microscopy, reflection high-energy electron-beam diffraction, and transmission electron microscopy revealed the formation of spatially separated InAs QDs having a single-crystalline structure on SiOx films. Photoluminescence (PL) was observed from InAs QDs on SiOx films and analyzed by theoretical calculation. PL peak of 1.22–1.23 eV at 15 K was attributed to the first excited state transition concerning a heavy hole.
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