Abstract
On the basis of a phenomenological treatment, the nonlinear dielectric constant of nondegenerate nonparabolic semiconductors like InSb (having both +e and −e carriers) has been studied for Gaussian electromagnetic beams. The nonlinearity resulting from redistribution of carriers in the sample at low temperatures has been shown to be an order of magnitude higher than that due to the non-parabolicity of energy bands. Self focusing of electromagnetic beams as a result of these nonlinearities has been discussed.
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