Abstract
Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150°C). Unlike other chalcogenide-based ion conducting device types, the SDC device does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more reliable to fabricate. Device pulsed response shows fast state switching in the 10−9s range. Device cycling at both room temperature and 140°C show write endurance of at least 1 billion.
Highlights
Memristors [1] have been studied intensely for the past several years due to their potential use in applications such as non-volatile memory [2], neuromorphic and bio-inspired computing [3,4,5,6,7,8], and threshold logic [9].The type of memristor described in this work is an ion-conducting device which relies on Ag+ movement into channels within the device active layer to change the device resistance
Electrical properties of the layered memristor device are presented. These include the response of the device to a quasi-static DC IV sweep as a function of temperature and compliance current, frequency response to a sinusoidal input signal, write endurance, and pulsed response
At normal operating temperatures up to at least 150 °C, the first DC write sweep applied to a device post fabrication, usually called the forming sweep [10], does not require application of a higher potential like other memristor device types
Summary
Memristors [1] have been studied intensely for the past several years due to their potential use in applications such as non-volatile memory [2], neuromorphic and bio-inspired computing [3,4,5,6,7,8], and threshold logic [9]. The type of memristor described in this work is an ion-conducting device ( referred to as an electrochemical metallization, ECM, device) which relies on Ag+ movement into channels within the device active layer to change the device resistance. This memristor, referred to as a self-directed channel (SDC) device, uses a metal-catalyzed reaction within the device active layer to generate permanent conductive channels that contain Ag agglomeration sites. Electrical properties of the layered memristor device are presented. These include the response of the device to a quasi-static DC IV sweep as a function of temperature and compliance current, frequency response to a sinusoidal input signal, write endurance, and pulsed response
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