Self-diffusion in polycrystalline InSb films

Abstract

In the present paper self-diffusion of indium and antimony is studied in polycrystalline InSb films by the neutron activation tracer scanning method. Grain boundary diffusion parameters are evaluated in the temperature range 200 to 400 degrees C. The pre-exponential factor and activation energy for indium self-diffusion are 1.17*10-10 m2 s-1 and 0.84 eV respectively. For antimony self-diffusion these parameters are 1.32*10-8 m2 s-1 and 1.11 eV. Both indium and antimony atoms diffuse via grain boundaries in the temperature range studied. The grain boundary energy and its temperature dependence are also reported.