Abstract
We report on self-differential detection using laminated magnetic tunnel junctions. The self-differential elements using laminated magnetic tunnel junctions (MTJs) with 400-nm width were fabricated using photolithography. A chemical mechanical polishing technique was used before preparing the top MTJs. The differential resistance shows the signal output of plus and minus at the zero magnetic field, which indicates the potential for applications realizing high-density magnetic random access memories with very fast access time.
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