Abstract
Self-consistent pseudopotentials have been used to calculate the electronic properties of monolayer and bilayer GaAs AlAs (001) superlattices. Both were found to be indirect-gap semiconductors with thermal gaps of about 2eV, in good agreement with experiment. Although the charge transfer from AlAs to GaAs was found to be small in both cases, the effects of self-consistency were found to be significant. The valence band offsets, calculated directly from the method, were also found to be different in the two superlattices.
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