Abstract

Capacitively coupled plasmas (CCPs) generated using high frequency (3–30 MHz) and very high frequency (30–300 MHz) radio-frequency (rf) sources are used for many plasma processing applications including thin film etching and deposition. When chamber dimensions become commensurate with the effective rf wavelength in the plasma, electromagnetic wave effects impose a significant influence on plasma behavior. Because the effective rf wavelength in plasma depends upon both rf and plasma process conditions (e.g., rf power and gas pressure), a self-consistent model including both the rf power delivery system and the plasma discharge is highly desirable to capture a more complete physical picture of the plasma behavior. A three-dimensional model for self-consistently studying both electrodynamic and plasma dynamic behavior of large-area (Gen 10, >8 m2) CCP is described in this paper. This model includes Maxwell’s equations and transport equations for charged and neutral species, which are coupled and solved in the time domain. The complete rf plasma discharge chamber including the rf power delivery subsystem, rf feed, electrodes, and the plasma domain is modeled as an integrated system. Based on this full-wave solution model, important limitations for processing uniformity imposed by electromagnetic wave propagation effects in a large-area CCP (3.05×2.85 m2 electrode size) are studied. The behavior of H2 plasmas in such a reactor is examined from 13.56 to 200 MHz. It is shown that various rectangular harmonics of electromagnetic fields can be excited in a large-area rectangular reactor as the rf or power is increased. The rectangular harmonics can create not only center-high plasma distribution but also high plasma density at the corners and along the edges of the reactor.

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