Self-consistent cluster-embedding calculation method and the calculated electronic structure of NiO.

Abstract

The self-consistent cluster-embedding method is discussed theoretically. A definition of the total energy for an embedded cluster has been introduced. The method has two advantages. (i) It can describe both localized and band properties, including their excitations. (ii) It can give a good description of the magnetic properties for both spin-ordered and spin-disordered states. The electronic structure of NiO is studied using a high-quality basis set to calculate the electronic structure of a small embedded cluster and an antiferromagnetic insulating ground state is obtained. The picture has both localized and band properties. A small energy gap separates the unoccupied and occupied nickel 3d orbitals which are well localized. Each 3d orbital is attached to a particular nickel ion. Below the 3d levels are two diffuse oxygen 2p bands, and above the 3d levels are oxygen 3s, nickel 4s, and oxygen 3p bands. Experimental data concerning photoemission and optical absorption can be interpreted naturally. The spin magnetic moment of the nickel ion is calculated correctly. The simulation of the spin-disordered state shows that NiO remains as an insulator in the paramagnetic state. The N\'eel temperature of NiO is calculated directly to give a reasonable result. The Hubbard U parameter for nickel 3d electrons is estimated. The calculation shows that the excited nickel 3d electrons are also well localized and the overlaps are less than 4.5%. We propose the following: The overlap of the excited 3d electrons is too small to form a metallic band, but the overlap is sufficient for the ``hole'' to migrate through the crystal. In this sense, NiO is a charge-transfer insulator with a gap of about 4 eV (mostly from oxygen to nickel). The calculated small energy gap (about 0.5 eV) provides the activation energy of NiO which is supported by the experimental results.