Self-consistent circuit model for plasma source ion implantation

Abstract

A self-consistent circuit model which can describe the dynamic behavior of the entire pulsed system for plasma source ion implantation has been developed and verified with experiments. In the circuit model, one-dimensional fluid equations of plasma sheath have been numerically solved with self-consistent boundary conditions from the external circuit model including the pulsed power system. Experiments have been conducted by applying negative, high-voltage pulses up to -10 kV with a capacitor-based pulse modulator to the planar target in contact with low-pressure argon plasma produced by radio-frequency power at 13.56 MHz. The measured pulse voltage and current waveforms as well as the sheath motion have shown good agreements with the simulation results.